Datasheet > 2SD1423AS

2SD1423AS

更新时间： 2024-11-10 23:20:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
3页	50K
描述
TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 500MA I(C) \| TO-92VAR

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中文翻译

获取价格

数据手册

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2SD1423AS 数据手册

Transistor

2SD1423, 2SD1423A

Silicon NPN epitaxial planer type

For low-frequency amplification

Unit: mm

Complementary to 2SB1030 and 2SB1030A

4.0±0.2

Features

Optimum for high-density mounting.

■

●

Allowing supply with the radial taping.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

Ratings

Unit

marking

Collector to

2SD1423

2SD1423A

2SD1423

V_CBO

base voltage

Collector to

V_CEO

1.27 1.27

emitter voltage 2SD1423A

Emitter to base voltage

Peak collector current

Collector current

2.54±0.15

V_EBO

I_CP

I_C

0.5

1:Emitter

2:Collector

3:Base

EIAJ:SC–72

New S Type Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

300

˚C

T_j

150

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

0.1

Unit

µA

V_CB= 20V, I_E= 0

Collector cutoff current

I_CEO

V_CE= 20V, I_B= 0

µA

Collector to base

voltage

2SD1423

2SD1423A

V_CBO

I_C= 10µA, I_E= 0

Collector to emitter 2SD1423

V_CEO

V_EBO

I_C= 2mA, I_B= 0

voltage

2SD1423A

Emitter to base voltage

I_E= 10µA, I_C= 0

h_FE1

h_FE2

V_CE= 10V, I_C= 150mA^*2

V_CE= 10V, I_C= 500mA^*2

I_C= 300mA, I_B= 30mA^*2

340

0.6

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

MHz

Transition frequency

f_T

V_CB= 10V, I_E= –50mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

200

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

FE1

Rank

h_FE1

85 ~ 170

120 ~ 240

170 ~ 340

12 3

中文翻译

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2SD1423R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 500MA I(C) \| TO-92VAR
2SD1423S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 500MA I(C) \| TO-92VAR
2SD1424	PANASONIC	获取价格	Silicon NPN epitaxial planer type(For low-frequency amplification)
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