Datasheet > 2SD1426

2SD1426

更新时间： 2024-11-11 06:17:39

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	125K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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2SD1426 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD1426

DESCRIPTION

·With TO-3PH package

·Built-in damper diode

·High voltage ,high speed

·Low collector saturation voltage

APPLICATIONS

·Designed for use in color TV deflection

circuits

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PH) and symbol

Emitter

Absolute maximum ratings (Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

1500

600

UNIT

Open base

Open collector

3.5

I_B

Base current

1.0

P_D

Total power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

ꢀ

T_j

150

T_stg

-55~150

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-C}

Thermal resistance junction case

1.56

ꢀ/W

12 3

中文翻译

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