生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | 风险等级: | 5.73 |
Is Samacsys: | N | 最大集电极电流 (IC): | 6 A |
集电极-发射极最大电压: | 300 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 500 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1072 | ETC |
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TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON | |
2SD1073 | SAVANTIC |
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Silicon NPN Power Transistors | |
2SD1073 | ISC |
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Silicon NPN Power Transistors | |
2SD1073 | FUJI |
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HIGH POWER DARLINGTON | |
2SD1083 | ETC |
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SILICON NPN EPITAXIAL PLANAR POWER SWITCHING TV HORIZONTAL DEFLECTION OUTPUT | |
2SD1085(K) | HITACHI |
获取价格 |
POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN | |
2SD1085K | ETC |
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TRANSISTOR | BJT | DARLINGTON | NPN | 300V V(BR)CEO | 3A I(C) | TO-220AB | |
2SD1087 | ETC |
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TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 15A I(C) | SIP | |
2SD1088 | MOSPEC |
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POWER TRANSISTORS(6A,250V,30W) | |
2SD1088 | Wing Shing |
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SILICON NPN TRIPLE DIFFUSED TRANSISTOR(GENERAL DESCRIPTION) |