Datasheet > 2SD0602AS

2SD0602AS

更新时间： 2024-11-24 23:20:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
3页	67K
描述
TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 500MA I(C) \| TO-236AB

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中文翻译

获取价格

数据手册

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2SD0602AS 数据手册

Transistor

2SD0602, 2SD0602A (2SD602, 2SD602A)

Silicon NPN epitaxial planer type

For general amplification

Unit: mm

Complementary to 2SB0710 (2SB710) and 2SB0710A (2SB710A)

2.8 ⁺^–0⁰^.^.³²

1.5 ⁺^–0⁰^.^.⁰²⁵⁵

Features

Low collector to emitter saturation voltage V_CE(sat)

0.65 0.15

Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

Ratings

Unit

Collector to

2SD0602

2SD0602A

2SD0602

V_CBO

base voltage

Collector to

0.1 to 0.3

0.4 0.2

V_CEO

emitter voltage 2SD0602A

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

I_C

1:Base

JEDEC:TO–236

EIAJ:SC–59

Mini Type Package

2:Emitter

3:Collector

500

˚C

Collector power dissipation

Junction temperature

Storage temperature

P_C

200

(2SD0602)

Marking symbol : W

(2SD0602A)

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

Collector cutoff current

V_CB= 20V, I_E= 0

0.1

µA

Collector to base

voltage

2SD0602

2SD0602A

V_CBO

I_C= 10µA, I_E= 0

Collector to emitter 2SD0602

V_CEO

V_EBO

I_C= 10mA, I_B= 0

voltage

2SD0602A

Emitter to base voltage

I_E= 10µA, I_C= 0

h_FE1

h_FE2

V_CE= 10V, I_C= 150mA^*2

V_CE= 10V, I_C= 500mA^*2

I_C= 300mA, I_B= 30mA^*2

V_CB= 10V, I_E= –50mA^*2, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

160

340

0.6

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

0.35

200

MHz

Transition frequency

f_T

Collector output capacitance

C_ob

^*2Pulse measurement

FE1

Rank classification

Rank

h_FE1

85 ~ 170

120 ~ 240

170 ~ 340

2SD0602

Marking

Symbol

Note.) The Part numbers in the Parenthesis show

conventional part number.

2SD0602A

12 3

中文翻译

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与2SD0602AS相关器件

型号	品牌	获取价格	描述	数据表
2SD0602A-S	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
2SD0602Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 500MA I(C) \| TO-236AB
2SD0602R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 500MA I(C) \| TO-236AB
2SD0602S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 500MA I(C) \| TO-236AB
2SD0637(2SD637)	ETC	获取价格	2SD0637 (2SD637) - NPN Transistor
2SD0637Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 100MA I(C) \| SC-71
2SD0637R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 100MA I(C) \| SC-71
2SD0637S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 100MA I(C) \| SC-71
2SD0638	PANASONIC	获取价格	For Medium-Power General Amplification
2SD0638(2SD638)	ETC	获取价格	小信号デバイス－小信号トランジスタ－汎用低周波増幅