Datasheet > 2SC5651

2SC5651

更新时间： 2024-10-30 19:55:11

品牌	Logo	应用领域
CEL		晶体管
页数	文件大小	规格书
2页	19K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, CERAMIC, M23, 3 PIN

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2SC5651 技术参数

生命周期：	Contact Manufacturer	包装说明：	CERAMIC, M23, 3 PIN
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.4
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	6 V	配置：	SINGLE
最高频带：	L BAND	JESD-30 代码：	R-CBCC-N3
元件数量：	1	端子数量：	3
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	CHIP CARRIER	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	BOTTOM
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	5000 MHz	Base Number Matches：	1

2SC5651 数据手册

PRELIMINARY DATA SHEET

NPN SILICON TRANSISTOR NE688M23

OUTLINE DIMENSIONS ^{(Units in mm)}

FEATURES

PACKAGE OUTLINE M03

•

NEW MINIATURE M23 PACKAGE:

– World's smallest transistor package footprint —

leads are completely underneath package body

– Low profile/0.55 mm package height

0.5

– Ceramic substrate for better RF performance

•

HIGH GAIN BANDWIDTH PRODUCT:

0.25

0.4

fT = 9.5 GHz

LOW NOISE FIGURE:

NF = 1.7 dB at 2 GHz

HIGH COLLECTOR CURRENT:

IC MAX = 100 mA

0.25

0.2

0.15

DESCRIPTION

0.6

The NE688M23 transistor is designed for low cost amplifier

andoscillatorapplications.Lownoisefigure,highgainandhigh

current capability equate to wide dynamic range and excellent

linearity. NEC's new low profile/ceramic substrate style "M23"

package is ideal for today's portable wireless applications. The

NE688 is also available in chip and six different low cost plastic

surface mount package styles.

BOTTOM VIEW

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

EIAJ¹REGISTERED NUMBER

PACKAGE OUTLINE

NE688M23

2SC5651

M23

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

Gain Bandwidth at VCE = 1 V, IC = 3 mA, f = 2 GHz

Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz

Insertion Power Gain at VCE = 1 V, IC = 3 mA, f = 2 GHz

Forward Current Gain at VCE = 1 V, IC = 3 mA

Collector Cutoff Current at VCB = 5 V, IE = 0

GHz

1.9

|S21E|²

2.5

hFE

145

0.1

0.8

ICBO

IEBO

µA

Emitter Cutoff Current at VEB = 1 V, IC = 0

CRE

Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz

0.7

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.

California Eastern Laboratories

中文翻译

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与2SC5651相关器件

型号	品牌	获取价格	描述	数据表
2SC5651-EB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN,
2SC5651-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN,
2SC5651-T1EB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN,
2SC5651-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN,
2SC5654	PANASONIC	获取价格	Silicon NPN epitaxial planer type(For DC-DC converter)
2SC5654G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMP
2SC5657	PANASONIC	获取价格	Horizontal Deflection Transistor Series for TV
2SC5658	ROHM	获取价格	2SC4097 / 2SC1741S
2SC5658	CJ	获取价格	SOT-723
2SC5658	BL Galaxy Electrical	获取价格	50V,0.15A,General Purpose NPN Bipolar Transistor

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