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2SC5658-HF PDF预览

2SC5658-HF

更新时间: 2024-02-29 05:13:58
品牌 Logo 应用领域
上华 - COMCHIP 晶体晶体管
页数 文件大小 规格书
5页 98K
描述
General Purpose Transistor

2SC5658-HF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F3Reach Compliance Code:compliant
风险等级:5.66最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):270JESD-30 代码:R-PDSO-F3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管元件材料:SILICON标称过渡频率 (fT):180 MHz
Base Number Matches:1

2SC5658-HF 数据手册

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General Purpose Transistor  
Comchip  
S M D D i o d e S p e c i a l i s t  
2SC5658-HF (NPN)  
RoHS Device  
Halogen Free  
SOT-723  
Features  
0.011(0.270)  
0.007(0.170)  
-Low Cob.  
1
Mechanical data  
0.049(1.25) 0.031(0.800)  
0.045(1.15) Typ.  
0.015(0.370)  
0.011(0.270)  
3
-Case: SOT-723, molded plastic.  
-Terminals: solderable per MIL-STD-750,  
method 2026.  
2
0.033(0.850)  
0.030(0.750)  
0.049(1.250)  
0.045(1.150)  
Circuit diagram  
0.020(0.50)  
Max.  
-1.BASE  
3
-2.EMITTER  
-3.COLLECTOR  
0.002(0.050)  
Max.  
0.006(0.15)  
Max.  
1
2
Absolute Maximum Ratings (at TA=25°C )  
Dimensions in inches and (millimeter)  
Symbol  
Parameter  
Collector-Base voltage  
Collector-Emitter voltage  
Emitter-Base voltage  
Value  
Unit  
VCBO  
VCEO  
VEBO  
IC  
60  
50  
V
V
7
V
Collector current- continuous  
Collector dissipation  
150  
mA  
µA  
µA  
µA  
PC  
100  
Junction temperature  
Storage temperature  
TJ  
150  
TSTG  
-55 ~ +150  
Electrical Characteristics (at TA=25°C unless otherwise noted)  
Symbol  
Typ  
Parameter  
Conditions  
IC =50μA , IE=0  
IC =1mA , IB=0  
Min  
60  
50  
7
Max  
Unit  
Collector-Base breakdown voltage  
Collector-Emitter breakdown voltage  
Emitter-Base breakdown voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
V
V
IE =50μA , IC=0  
VCB=60V , IE=0  
VEB=7V , IC=0  
V
µA  
µA  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
ICBO  
IEBO  
0.1  
0.1  
560  
0.4  
VCE=6V , IC=1mA  
IC=50mA , IB=5mA  
hFE  
120  
VCE(sat)  
Collector-Emitter saturation voltage  
Transition frequency  
V
VCE=12V , IC=2mA  
f=100MHZ  
fT  
180  
MHZ  
VCB=12V , IE=0  
f=1MHZ  
Output capacitance  
pF  
Cob  
3.5  
Rank  
Q
R
S
Range  
120~270  
180~390  
270~560  
Company reserves the right to improve product design , functions and reliability without notice.  
REV: A  
Page 1  
QW-JTR07  
Comchip Technology CO., LTD.  

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