5秒后页面跳转
2SC5661 PDF预览

2SC5661

更新时间: 2022-12-12 19:47:11
品牌 Logo 应用领域
罗姆 - ROHM 晶体放大器晶体管
页数 文件大小 规格书
2页 72K
描述
High-Frequency Amplifier Transistor (18V, 50mA, 1.5GHz)

2SC5661 数据手册

 浏览型号2SC5661的Datasheet PDF文件第2页 
2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K  
Transistors  
High-Frequency Amplifier Transistor  
(18V, 50mA, 1.5GHz)  
2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K  
!External dimensions (Units : mm)  
!Features  
1) High transition frequency. (Typ. fT = 1.5GHz)  
2) Small rbb’Ccand high gain. (Typ. 6ps)  
3) Small NF.  
2SC5661  
1.2  
0.2 0.8 0.2  
( )  
2
(3)  
( )  
1
(1) Base  
0.15Max.  
(2) Emitter  
(3) Collector  
ROHM : VMT3  
2SC4725  
! Absolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
30  
Unit  
V
Collector-base voltage  
V
V
V
CBO  
CEO  
EBO  
( )  
1
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
18  
V
( )  
2
( )  
3
3
V
I
C
50  
mA  
0.8  
1.6  
2SC5661, 2SC4725  
2SC4082, 2SC3837K  
0.15  
0.2  
Collector power  
dissipation  
P
C
W
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
(1) Emitter  
(2) Base  
(3) Collector  
Tstg  
55~+150  
ROHM : EMT3  
EIAJ : SC-75A  
0.1Min.  
2SC4082  
!Packaging specifications and hFE  
Type  
2SC4725  
EMT3  
NP  
2SC4082  
UMT3  
NP  
2SC3837K  
SMT3  
2SC5661  
VMT3  
NP  
1.25  
2.1  
Package  
hFE  
NP  
(1) Emitter  
(2) Base  
(3) Collector  
Marking  
Code  
AC  
1C  
AC  
AC  
TL  
T106  
T146  
T2L  
Basic ordering unit  
(pieces)  
ROHM : UMT3  
EIAJ : SC-70  
8000  
3000  
3000  
3000  
0.1to0.4  
Each lead has same dimensions  
Denotes hFE  
2SC3837K  
1.6  
2.8  
(1) Emitter  
(2) Base  
(3) Collector  
ROHM : SMT3  
EIAJ : SC-59  
0.3to0.6  
Each lead has same dimensions  
!Electrical characteristics (Ta=25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
30  
18  
3
V
V
I
I
I
C
C
=
=
=
10µA  
1mA  
V
E
10µA  
I
CBO  
EBO  
CE(sat)  
FE  
56  
600  
0.5  
0.5  
0.5  
180  
1.5  
13  
µA  
µA  
V
V
CB  
EB  
=
=
10V  
Emitter cutoff current  
I
V
2V  
Collector-emitter saturation voltage  
DC current transfer ratio  
V
I
C/I  
B
=
20mA/4mA  
h
V
V
V
V
V
CE/I  
C
= 10V/10mA  
f
T
1500  
0.9  
6
MHz  
pF  
ps  
dB  
CB  
CB  
CB  
CE  
=
=
=
=
10V , I  
10V , I  
10V , I  
12V , I  
C
E
C
C
=
=
=
=
10mA , f  
0A , f 1MHz  
10mA , f 31.8MHz  
2mA , f 200MHz , Rg = 50Ω  
= 200MHz  
Transition frequency  
Output capacitance  
Collector-base time constant  
Noise factor  
Cob  
rbb'·Cc  
NF  
=
=
4.5  
=
1/1  

与2SC5661相关器件

型号 品牌 描述 获取价格 数据表
2SC5661_09 ROHM High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz)

获取价格

2SC5661T2L ROHM RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic

获取价格

2SC5662 ROHM High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)

获取价格

2SC5662T2L ROHM RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili

获取价格

2SC5662T2LN ETC TRANSISTOR | BJT | NPN | 11V V(BR)CEO | 50MA I(C) | EMD3VAR

获取价格

2SC5662T2LP ETC TRANSISTOR | BJT | NPN | 11V V(BR)CEO | 50MA I(C) | EMD3VAR

获取价格