Datasheet > 2SC5668

2SC5668

更新时间： 2024-09-24 23:20:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管 ISM频段放大器
页数	文件大小	规格书
20页	87K
描述
TRANSISTOR \| BJT \| NPN \| 3.3V V(BR)CEO \| 35MA I(C) \| SOT-416VAR

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2SC5668 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5668

NPN SILICON RF TRANSISTOR FOR

LOW NOISE HIGH-GAIN AMPLIFICATION

FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES

•

Ideal for low noise high-gain amplification and oscillation at 3 GHz or over

NF = 1.1 dB TYP., G^a= 11 dB @ f = 2 GHz, V^CE= 2 V, I^C= 5 mA

Maximum available power gain: MAG. = 12.5 dB TYP. @ f = 2 GHz, V^CE= 2 V, I^C= 20 mA

High f^T: f^T= 21 GHz TYP. @ f = 2 GHz, V^CE= 2 V, I^C= 20 mA

•

f^T= 25 GHz “UHS0” (Ultra High Speed Process) technology adopted

Flat-lead 3-pin thin-type ultra super minimold (t = 0.59 mm)

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5668

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (collector) face the perforation side of the tape

2SC5668-T1

Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).

ABSOLUTE MAXIMUM RATINGS (T^A= +25 °C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

3.3

1.5

°C

tot^Note

115

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy substrate

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14854EJ1V0DS00 (1st edition)

Date Published June 2000 NS CP(K)

Printed in Japan

2000

12 3 4 5 6 7...20

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与2SC5668相关器件

型号	品牌	获取价格	描述	数据表
2SC5668(NE667M03)	ETC	获取价格	Discrete
2SC5668-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU
2SC5668-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU
2SC5668-T1	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 3.3V V(BR)CEO \| 35MA I(C) \| SOT-416VAR
2SC5668-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon, NPN, THIN, UL
2SC5668-T1FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU
2SC5669	SANYO	获取价格	230V / 15A, AF100W Output Applications
2SC5669	SAVANTIC	获取价格	Silicon NPN Power Transistors
2SC5669	ISC	获取价格	Silicon NPN Power Transistors
2SC5669	JMNIC	获取价格	Silicon NPN Power Transistors