Datasheet > 2SC5675-T1

2SC5675-T1

更新时间： 2024-02-10 01:31:05

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
24页	96K
描述
BJT

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技术参数
数据手册

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2SC5675-T1 技术参数

生命周期：	Obsolete	包装说明：	ULTRA SUPER MINIMOLD PACKAGE-3
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	0.1 A	基于收集器的最大容量：	1.2 pF
集电极-发射极最大电压：	5.5 V	配置：	SINGLE
最高频带：	L BAND	JESD-30 代码：	R-PDSO-F3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	5500 MHz	Base Number Matches：	1

2SC5675-T1 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5675

NPN SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW NOISE

3-PIN ULTRA SUPER MINIMOLD

FEATURES

•

Low voltage operation, low phase distortion

Ideal for OSC applications

3-pin ultra super minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5675

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (Collector) face the perforation side of the tape

2SC5675-T1

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

5.5

1.5

100

°C

tot^Note

200

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy substrate

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P15275EJ1V0DS00 (1st edition)

Date Published January 2001 NS CP(K)

Printed in Japan

2001

12 3 4 5 6 7...24

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