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2SC5677-T3 PDF预览

2SC5677-T3

更新时间: 2024-02-21 15:42:36
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
24页 100K
描述
BJT

2SC5677-T3 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.16其他特性:LOW NOISE
最大集电极电流 (IC):0.1 A基于收集器的最大容量:1.2 pF
集电极-发射极最大电压:5.5 V配置:SINGLE
最高频带:L BANDJESD-30 代码:R-PDSO-F3
JESD-609代码:e6元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN BISMUTH端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):5500 MHzBase Number Matches:1

2SC5677-T3 数据手册

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DATA SHEET  
NPN SILICON RF TRANSISTOR  
2SC5677  
NPN SILICON RF TRANSISTOR FOR  
HIGH-FREQUENCY LOW NOISE  
3-PIN LEAD-LESS MINIMOLD  
FEATURES  
Low voltage operation, low phase distortion  
Ideal for OSC applications  
3-pin lead-less minimold package  
ORDERING INFORMATION  
Part Number  
Quantity  
Supplying Form  
2SC5677  
50 pcs (Non reel)  
10 kpcs/reel  
• 8 mm wide embossed taping  
• Pin 2 (Base) face the perforation side of the tape  
2SC5677-T3  
Remark To order evaluation samples, consult your NEC sales representative.  
Unit sample quantity is 50 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
9
5.5  
V
1.5  
V
100  
mA  
mW  
°C  
°C  
P
tot Note  
140  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
65 to +150  
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy substrate  
Because this product uses high-frequency technology, avoid excessive static electricity, etc.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. P15287EJ2V0DS00 (2nd edition)  
Date Published June 2001 NS CP(K)  
Printed in Japan  
The mark shows major revised points.  
2001  
©

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