Datasheet > 2SC5704(NE662M16)

2SC5704(NE662M16)

更新时间： 2024-01-16 20:03:55

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描述
Discrete

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数据手册

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2SC5704(NE662M16) 数据手册

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DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5704

NPN SILICON RF TRANSISTOR FOR

LOW NOISE HIGH-GAIN AMPLIFICATION

6-PIN LEAD-LESS MINIMOLD

FEATURES

•

Ideal for low noise high-gain amplification and oscillation at 3 GHz or over

NF = 1.1 dB TYP. @ V^CE= 2 V, I^C= 5 mA, f = 2 GHz

High f^T: f^T= 25.0 GHz TYP. @ V^CE= 3 V, I^C= 30 mA, f = 2 GHz

6-pin lead-less minimold package

•

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5704

50 pcs (Non reel)

10 kpcs/reel

• 8 mm wide embossed taping

• Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape

2SC5704-T3

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

3.3

1.5

°C

tot ^Note

115

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy substrate

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P15364EJ1V0DS00 (1st edition)

Date Published April 2001 NS CP(K)

Printed in Japan

2001

12 3 4 5 6 7...24

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