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2SC5706 PDF预览

2SC5706

更新时间: 2024-11-07 04:05:23
品牌 Logo 应用领域
WEITRON 晶体晶体管局域网
页数 文件大小 规格书
5页 190K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

2SC5706 数据手册

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2SC5706  
NPN EPITAXIAL PLANAR TRANSISTOR  
P b  
Lead(Pb)-Free  
1.BASE  
3
2.COLLECTOR  
3.EMITTER  
2
1
Features:  
* Large current capacitance  
D-PAK(TO-252)  
* Low collector-to-emitter saturation voltage  
* High-speed switching  
* High allowable dissipation  
Mechanical Data:  
* Case : Molded Plastic  
* Weight : 0.925 grams  
ABSOLUTE MAXIMUM RATINGS(Ta=25˚C)  
Rating  
Symbol  
Value  
Unit  
V
80  
V
V
V
V
Collector to Base Voltage  
Collector to Emitter Voltage  
Collector to Emitter Voltage  
Collector to Base Voltage  
CBO  
V
80  
50  
6
CES  
V
CEO  
V
EBO  
I (DC)  
5
C
A
Collector Current  
Base Current  
I (Pulse)  
C
7.5  
I
1.2  
A
B
T = 25°C  
Total Device Disspation  
0.8  
15  
A
P
D
W
T = 25°C  
C
+150  
Junction Temperature  
Storage Temperature  
Tj  
˚C  
˚C  
-55 to +150  
Tstg  
Device Marking  
2SC5706 = 5706  
WEITRON  
http://www.weitron.com.tw  
1/5  
25-Aug-05  

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