Datasheet > 2SC5692_04

2SC5692_04

更新时间： 2024-09-25 12:50:07

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	135K
描述
High-Speed Switching Applications

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2SC5692_04 数据手册

2SC5692

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5692

High-Speed Switching Applications

Unit: mm

DC-DC Converter Applications

Strobe Applications

•

High DC current gain: h

= 400 to 1000 (I = 0.3 A)

Low collector-emitter saturation voltage: V

= 0.14 V (max)

CE (sat)

High-speed switching: t = 120 ns (typ.)

Maximum Ratings

(Ta 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

100

CBO

Collector-emitter voltage

Emitter-base voltage

CEX

CEO

EBO

2.5

4.0

250

625

1000

150

Collector current

Base current

Pulse

JEDEC

JEITA

―

Collector power

dissipation

TOSHIBA

2-3S1A

(Note)

t = 10 s

Weight: 0.01 g (typ.)

Junction temperature

°C

Storage temperature range

stg

−55 to 150

Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area:

645 mm²)

Electrical Characteristics

(Ta 25°C)

Characteristics

Symbol

Test Condition

= 100 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

⎯

100

⎯

CBO

Emitter cut-off current

= 7 V, I = 0

EBO

Collector-emitter breakdown voltage

= 10 mA, I = 0

400

200

⎯

(BR) CEO

(1)

(2)

= 2 V, I = 0.3 A

⎯

1000

⎯

DC current gain

= 2 V, I = 1 A

⎯

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

Rise time

= 1 A, I = 20 mA

⎯

0.14

1.10

⎯

CE (sat)

BE (sat)

= 1 A, I = 20 mA

⎯

= 10 V, I = 0, f = 1 MHz

⎯

500

120

⎯

See Figure 1.

∼

−

Switching time

30 V, R = 30 Ω

Storage time

Fall time

⎯

stg

= −I = 33.3 mA

⎯

2004-07-01

12 3 4 5

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