5秒后页面跳转
2SC5676-T1FB-A PDF预览

2SC5676-T1FB-A

更新时间: 2024-02-05 10:50:04
品牌 Logo 应用领域
日电电子 - NEC 放大器ISM频段光电二极管晶体管
页数 文件大小 规格书
24页 97K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-3

2SC5676-T1FB-A 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:THIN, ULTRA SUPER MINIMOLD PACKAGE-3Reach Compliance Code:compliant
风险等级:5.72最大集电极电流 (IC):0.1 A
基于收集器的最大容量:1.2 pF集电极-发射极最大电压:5.5 V
配置:SINGLE最高频带:L BAND
JESD-30 代码:R-PDSO-F3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN BISMUTH端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):5500 MHzBase Number Matches:1

2SC5676-T1FB-A 数据手册

 浏览型号2SC5676-T1FB-A的Datasheet PDF文件第2页浏览型号2SC5676-T1FB-A的Datasheet PDF文件第3页浏览型号2SC5676-T1FB-A的Datasheet PDF文件第4页浏览型号2SC5676-T1FB-A的Datasheet PDF文件第5页浏览型号2SC5676-T1FB-A的Datasheet PDF文件第6页浏览型号2SC5676-T1FB-A的Datasheet PDF文件第7页 
DATA SHEET  
NPN SILICON RF TRANSISTOR  
2SC5676  
NPN SILICON RF TRANSISTOR FOR  
HIGH-FREQUENCY LOW NOISE  
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD  
FEATURES  
Low voltage operation, low phase distortion  
Ideal for OSC applications  
Flat-lead 3-pin thin-type ultra super minimold package  
ORDERING INFORMATION  
Part Number  
Quantity  
Supplying Form  
2SC5676  
50 pcs (Non reel)  
3 kpcs/reel  
• 8 mm wide embossed taping  
• Pin 3 (Collector) face the perforation side of the tape  
2SC5676-T1  
Remark To order evaluation samples, consult your NEC sales representative.  
Unit sample quantity is 50 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
9
5.5  
V
1.5  
V
100  
mA  
mW  
°C  
°C  
P
tot Note  
200  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
65 to +150  
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy substrate  
Because this product uses high-frequency technology, avoid excessive static electricity, etc.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. P15286EJ1V0DS00 (1st edition)  
Date Published February 2001 NS CP(K)  
Printed in Japan  
2001  
©

与2SC5676-T1FB-A相关器件

型号 品牌 获取价格 描述 数据表
2SC5677 ETC

获取价格

BJT
2SC5677(NE863M13) ETC

获取价格

Discrete
2SC5677-T3 ETC

获取价格

BJT
2SC568 NJSEMI

获取价格

General Purpose Diodes
2SC568 ONSEMI

获取价格

TRANSISTOR TRANSISTOR,BJT,NPN,15V V(BR)CEO,20MA I(C),TO-72, BIP General Purpose Small Sign
2SC5680 SANYO

获取价格

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
2SC5681 SANYO

获取价格

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
2SC5682 SANYO

获取价格

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
2SC5683 SANYO

获取价格

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
2SC5684 TOSHIBA

获取价格

SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS