Datasheet > 2SC5669

2SC5669

更新时间： 2024-11-13 06:16:15

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
4页	171K
描述
Silicon NPN Power Transistors

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中文翻译

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2SC5669 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC5669

DESCRIPTION

·With TO-3PN package

·Complement to type 2SA2031

·Wide area of safe operation

·Large current capacitance

APPLICATIONS

·For audio frequency output applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-3PN) and symbol

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

250

230

UNIT

Open base

Open collector

I_CM

Collector current-peak

T_a=25ꢀ

T_C=25ꢀ

2.5

P_C

Collectorl power dissipation

140

150

-55~150

T_j

Junction temperature

Storage temperature

ꢀ

T_stg

12 3 4

中文翻译

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与2SC5669相关器件

型号	品牌	获取价格	描述	数据表
2SC5669_15	JMNIC	获取价格	Silicon NPN Power Transistors
2SC5669_2015	JMNIC	获取价格	Silicon NPN Power Transistors
2SC5674	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
2SC5674(NE667M13)	ETC	获取价格	Discrete
2SC5674-T3	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
2SC5674-T3-FB	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
2SC5675	ETC	获取价格	BJT
2SC5675-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPE
2SC5675-T1	ETC	获取价格	BJT
2SC5675-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPE