2SC5585 / 2SC5663
Transistors
Low frequency transistor (12V, 0.5A)
2SC5585 / 2SC5663
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
zExternal dimensions (Unit : mm)
zApplications
For switching
For muting
2SC5585
( )
1
( )
2
( )
3
0.8
1.6
zFeatures
1) High current.
2) Low VCE(sat).
0.1Min.
(1) Emitter
(2) Base
(3) Collector
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
VCE(sat) ≤ 250mV at IC = 200mA / IB = 10mA
Abbreviated symbol : BX
2SC5663
1.2
0.2 0.8 0.2
( )
2
(3)
( )
1
0.15Max.
(1) Base
(2) Emitter
(3) Collector
ROHM : VMT3
Abbreviated symbol : BX
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
V
Collectot-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
15
12
V
6
V
I
C
500
mA
A
Collector current
I
CP
1
150
∗
Collector power dissipation
P
C
mW
°C
°C
Junction temperature
Storage temperature
Tj
150
Tstg
−55 to +150
∗
Single pulse Pw = 1ms
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
−
Unit
V
Conditions
Collector-base breakdown voltage
BVCBO
15
12
6
−
−
I
I
I
C
C
E
= 10µA
Collectoe-emitter brakdown voltage BVCEO
−
V
= 1mA
= 10µA
CB = 15V
CB = 6V
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
CBO
−
−
V
I
−
−
100
100
250
680
−
nA
nA
mV
−
V
V
Emitter cutoff current
I
EBO
CE(sat)
FE
−
−
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
V
−
90
−
I
C
= 200mA, I
B
= 10mA
= 10mA
= −10mA, f = 100MHz
= 0A, f = 1MHz
h
V
V
V
CE = 2V, I
C
270
−
f
T
320
7.5
MHz
pF
CE = 2V, I
E
Output capacitance
Cob
−
−
CB = 10V, I
E
Rev.B
1/2