Datasheet > 2SC5667-T1FB

2SC5667-T1FB

更新时间： 2024-11-13 20:49:19

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
20页	86K
描述
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3

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2SC5667-T1FB 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5667

NPN SILICON RF TRANSISTOR FOR

LOW NOISE HIGH-GAIN AMPLIFICATION

3-PIN ULTRA SUPER MINIMOLD

FEATURES

•

Ideal for low noise high-gain amplification and oscillation at 3 GHz or over

NF = 1.1 dB TYP., G^a= 11 dB @ f = 2 GHz, V^CE= 2 V, I^C= 5 mA

Maximum available power gain: MAG. = 12.5 dB TYP. @ f = 2 GHz, V^CE= 2 V, I^C= 20 mA

High f^T: f^T= 21 GHz TYP. @ f = 2 GHz, V^CE= 2 V, I^C= 20 mA

f^T= 25 GHz “UHS0” (Ultra High Speed Process) technology adopted

3-pin ultra super minimold (t = 0.75 mm)

•

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5667

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (collector) face the perforation side of the tape

2SC5667-T1

Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).

ABSOLUTE MAXIMUM RATINGS (T^A= +25 °C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

3.3

1.5

°C

tot^Note

115

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy substrate

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14853EJ1V0DS00 (1st edition)

Date Published June 2000 NS CP(K)

Printed in Japan

2000

12 3 4 5 6 7...20

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2SC5668-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU
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