Datasheet > 2SC5658T2LR

2SC5658T2LR

更新时间： 2024-11-01 12:26:35

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管光电二极管 PC
页数	文件大小	规格书
5页	110K
描述
General purpose transistor (50V, 0.15A)

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数据手册

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2SC5658T2LR 数据手册

General purpose transistor (50V, 0.15A)

2SC2412K / 2SC4081 / 2SC4617 / 2SC5658

Features

Dimensions (Unit : mm)

1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)

2. Complements the 2SA1037AK / 2SA1576A /

2SA1774H / 2SA2029.

2SC2412K

2SC4081

1.25

2.1

1.6

2.8

Structure

Epitaxial planar type

NPN silicon transistor

0.1Min.

0.3Min.

Each lead has same dimensions

ROHM : UMT3

EIAJ : SC-70

(1) Emitter

(2) Base

ROHM : SMT3

EIAJ : SC-59

(1) Emitter

(2) Base

JEDEC : SOT-323

(3) Collector

JEDEC : SOT-346

(3) Collector

Abbreviated symbol: B*

2SC4617

2SC5658

1.2

0.2 0.8 0.2

( )

(3)

0.8

1.6

( )

0.15Max.

0.1Min.

(1) Base

(2) Emitter

(3) Collector

ROHM : EMT3

EIAJ : SC-75A

(1) Emitter

(2) Base

ROHM : VMT3

JEDEC : SOT-416

(3) Collector

Abbreviated symbol: B*

* Denotes hFE

Absolute maximum (Ta=25C)

Parameter

Symbol

Limits

Unit

VCBO

VCEO

VEBO

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

0.15

0.2

2SC2412K, 2SC4081

2SC4617, 2SC5658

Collector power

dissipation

0.15

150

Junction temperature

Storage temperature

°C

Tstg

−55 to +150

Electrical characteristics (Ta=25C)

Parameter

Symbol Min.

Typ.

−

Max.

−

Unit

Conditions

BV^CBO

BVCEO

BVEBO

=50μA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

−

C=1mA

−

E=50μA

CBO

EBO

CE(sat)

−

0.1

390

0.4

−

μA

−

CB=60V

−

Emitter cutoff current

EB=7V

CE=6V, I

/I =50mA/5mA

120

−

=1mA

DC current transfer ratio

−

C B

Collector-emitter saturation voltage

Transition frequency

−

180

MHz

CE=12V, I

E=−2mA, f=100MHz

Cob

−

3.5

E=0A, f=1MHz

Output capacitance

www.rohm.com

2012.01 - Rev.D

1/3

12 3 4 5

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