Datasheet > 2SC5658-Q-C

2SC5658-Q-C

更新时间： 2024-11-02 01:08:35

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SECOS		/
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描述
NPN Plastic Encapsulated Transistor

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2SC5658-Q-C 数据手册

2SC5658-C

0.15A , 60V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURE

ꢀ

Low Current (Max. 150mA)

Low Voltage

SOT-723

ꢀ

CLASSIFICATION OF h_FE

Product-Rank 2SC5658-Q-C 2SC5658-R-C 2SC5658-S-C

Range

120~270

180~390

270~560

Marking

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-723

7 inch

Millimeter

REF.

Min.

1.150

0.750

Max.

1.250

0.850

0.500

1.250

Min.

Max.

0.270

0.370

0.050

0.150

0.170

ORDER INFORMATION

0.270

Part Number

Type

1.150

0.800TYP.

2SC5658-Q-C

Collector

2SC5658-R-C

2SC5658-S-C

Lead (Pb)-free and Halogen-free

Base

Emitter

ABSOLUTE MAXIMUM RATINGS ^(T_A^{=25°C unless otherwise specified)}

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Power Dissipation

Junction, Storage Temperature

150

100

°C

P_C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Symbol Min.

Typ.

Max.

Unit

Test conditions

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=50µA, I_E=0

I_C=1mA, I_B=0

I_E=50µA, I_C=0

V_CB=60V, I_E=0

V_EB=7V, I_C=0

0.1

560

0.4

µA

Emitter Cut-off Current

I_EBO

DC Current Gain

h_FE

120

V_CE=6V, I_C=1mA

I_C=50mA, I_B=5mA

Collector-Emitter Saturation Voltage

Transition Frequency

V_CE(sat)

f_T

180

MHz V_CE=12V, I_C=2mA, f=100MHz

pF V_CB=12V, I_E=0, f=1MHz

Collector Output Capacitance

C_ob

3.5

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

06-Nov-2017 Rev. B

Page 1 of 2

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