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2SC5658 PDF预览

2SC5658

更新时间: 2024-10-29 22:52:47
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管光电二极管
页数 文件大小 规格书
3页 80K
描述
2SC4097 / 2SC1741S

2SC5658 数据手册

 浏览型号2SC5658的Datasheet PDF文件第2页浏览型号2SC5658的Datasheet PDF文件第3页 
2SC2412K / 2SC4081 / 2SC4617 /  
2SC5658 / 2SC1740S  
Transistors  
General purpose transistor (50V, 0.15A)  
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 /  
2SC1740S  
!External dimensions (Units : mm)  
!Features  
1) Low Cob.  
2SC2412K  
2SC4081  
2SC4617  
Cob=2.0pF (Typ.)  
( )  
1
2) Complements the 2SA1037AK /  
2SA1576A / 2SA1774H /  
2SA2029 / 2SA933AS.  
( )  
2
( )  
3
1.25  
2.1  
0.8  
1.6  
1.6  
2.8  
0.1Min.  
0.1Min.  
0.3Min.  
Each lead has same dimensions  
Each lead has same dimensions  
!Structure  
Epitaxial planar type  
NPN silicon transistor  
ROHM : UMT3  
EIAJ : SC-70  
(1) Emitter  
(2) Base  
ROHM : EMT3  
EIAJ : SC-75A  
(1) Emitter  
(2) Base  
ROHM : SMT3  
EIAJ : SC-59  
(1) Emitter  
(2) Base  
JEDEC : SOT-323  
(3) Collector  
JEDEC : SOT-416  
(3) Collector  
JEDEC : SOT-346  
(3) Collector  
Abbreviated symbol: B*  
Abbreviated symbol: B*  
Abbreviated symbol: B*  
2SC5658  
2SC1740S  
4±  
0.2  
2±0.2  
1.2  
0.2 0.8 0.2  
( )  
2
(3)  
( )  
1
+0.15  
0.45  
0.05  
0.15Max.  
+0.15  
+0.4  
0.45  
0.05  
2.5  
0.5  
0.1  
5
(1) (2) (3)  
(1) Base  
(1) Emitter  
ROHM : VMT3  
(2) Emitter  
(3) Collector  
ROHM  
EIAJ  
: SPT  
SC-72  
(2) Collector  
(3) Base  
:
Abbreviated symbol: B*  
* Denotes hFE  
!Absolute maximum (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
V
VCBO  
VCEO  
VEBO  
60  
50  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
7
V
I
C
0.15  
0.2  
A
2SC2412K, 2SC4081  
Collector power  
2SC4617, 2SC5658  
dissipation  
P
C
0.15  
0.3  
W
2SC1740S  
Junction temperature  
Tj  
150  
°C  
°C  
Storage temperature  
Tstg  
55~+150  

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