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2SC5651-T1EB PDF预览

2SC5651-T1EB

更新时间: 2024-02-18 00:40:57
品牌 Logo 应用领域
日电电子 - NEC 晶体管
页数 文件大小 规格书
24页 95K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN,

2SC5651-T1EB 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.78Is Samacsys:N
其他特性:LOW NOISE外壳连接:COLLECTOR
最大集电极电流 (IC):0.1 A基于收集器的最大容量:0.8 pF
集电极-发射极最大电压:6 V配置:SINGLE
最高频带:L BANDJESD-30 代码:R-CBCC-N3
元件数量:1端子数量:3
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:BOTTOM
晶体管元件材料:SILICON标称过渡频率 (fT):4500 MHz
Base Number Matches:1

2SC5651-T1EB 数据手册

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DATA SHEET  
NPN SILICON RF TRANSISTOR  
2SC5651  
NPN SILICON RF TRANSISTOR FOR  
HIGH-FREQUENCY LOW NOISE  
3-PIN NON-LEAD MINIMOLD  
FEATURES  
1006 package employed (1.0 × 0.6 × 0.5 mm)  
NF = 1.9 dB TYP., S21e 2 = 4.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz  
ORDERING INFORMATION  
Part Number  
Quantity  
Supplying Form  
2SC5651  
50 pcs (Non reel)  
10 kpcs/reel  
• 8 mm wide paper carrier taping  
• Pin 3 (Collector) face the perforation side of the tape  
2SC5651-T1  
Remark To order evaluation samples, consult your NEC sales representative.  
Unit sample quantity is 50 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
9
6
V
2
100  
V
mA  
mW  
°C  
°C  
P
totNote  
150  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
65 to +150  
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy substrate  
Because this product uses high-frequency technology, avoid excessive static electricity, etc.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. P15244EJ1V0DS00 (1st edition)  
Date Published December 2000 NS CP(K)  
Printed in Japan  
2000  
©

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