生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F4 |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.69 | 最大集电极电流 (IC): | 0.012 A |
基于收集器的最大容量: | 0.12 pF | 集电极-发射极最大电压: | 3.3 V |
配置: | SINGLE | 最高频带: | L BAND |
JESD-30 代码: | R-PDSO-F4 | 元件数量: | 1 |
端子数量: | 4 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 25000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5507-T2-FB | RENESAS |
获取价格 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, SUPER MINIMOLD PACKAGE-4 |
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2SC5507-T2FB-A | NEC |
获取价格 |
暂无描述 |
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2SC5508 | NEC |
获取价格 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPE |
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2SC5508 | RENESAS |
获取价格 |
NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION |
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2SC5508 | UTC |
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NPN |
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2SC5508(NE662M04) | ETC |
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Discrete |
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2SC5508-A | RENESAS |
获取价格 |
NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION |
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2SC5508-FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, |
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2SC5508-FB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, |
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2SC5508-T2 | NEC |
获取价格 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPE |
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