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2SC5508-T2

更新时间： 2024-02-23 14:11:22

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数	文件大小	规格书
16页	107K
描述
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

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技术参数
数据手册

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2SC5508-T2 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	PLASTIC, SUPERMINI-4	Reach Compliance Code：	compliant
风险等级：	5.64	其他特性：	LOW NOISE
最大集电极电流 (IC)：	0.035 A	基于收集器的最大容量：	0.24 pF
集电极-发射极最大电压：	3.3 V	配置：	SINGLE
最高频带：	L BAND	JESD-30 代码：	R-PDSO-F4
JESD-609代码：	e6	湿度敏感等级：	1
元件数量：	1	端子数量：	4
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN BISMUTH
端子形式：	FLAT	端子位置：	DUAL
处于峰值回流温度下的最长时间：	10	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	25000 MHz
Base Number Matches：	1

2SC5508-T2 数据手册

PRELIMINARY DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5508

NPN SILICON RF TRANSISTOR

FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

FEATURES

•

Ideal for low-noise, high-gain amplification applications

NF = 1.1 dB, G^a= 16 dB TYP. @f = 2 GHz, V^CE= 2 V, I^C= 5 mA

Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, V^CE= 2 V, I^C= 20 mA

f^T= 25 GHz technology

Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)

ORDERING INFORMATION

Part Number

Quantity

Packaging Style

2SC5508

Loose product (50 pcs)

• 8 mm wide emboss taping

• 1 pin (emitter), 2 pin (collector) feed hole direction

2SC5508-T2

Taping product (3 kpcs/reel)

Remark To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).

ABSOLUTE MAXIMUM RATINGS

Parameter

Collector to Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

3.3

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

1.5

°C

tot^Note

115

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

–65 to +150

Note T^A= +25 °C (free air)

THERMAL RESISTANCE

Item

Symbol

R^{th j-c}

Value

150

Unit

°C/W

Junction to Case Resistance

Junction to Ambient Resistance

R^{th j-a}

650

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice.

Document No. P13865EJ1V0DS00 (1st edition)

Date Published March 1999 N CP(K)

Printed in Japan

1999

12 3 4 5 6 7...16

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