Datasheet > 2SC5509-FB

2SC5509-FB

更新时间： 2024-01-03 22:35:15

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
10页	81K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINIMOLD, M04, 4 PIN

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2SC5509-FB 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5509

NPN SILICON RF TRANSISTOR

FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

FEATURES

•

Ideal for medium output power amplification

NF = 1.2 dB TYP., G^a= 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz

Maximum available power gain: MAG = 14 dB TYP. @ V^CE= 2 V, IC = 50 mA, f = 2 GHz

f^T= 25 GHz technology adopted

Flat-lead 4-pin thin-type super minimold (M04) package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5509

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape

2SC5509-T2

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

3.3

1.5

100

°C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

190

150

−65 to +150

Tstg

Note Free Air

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10009EJ02V0DS (2nd edition)

Date Published September 2004 CP(K)

Printed in Japan

The mark shows major revised points.

NEC Compound Semiconductor Devices, Ltd. 2001, 2004

12 3 4 5 6 7...10

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与2SC5509-FB相关器件

型号	品牌	获取价格	描述	数据表
2SC5509-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINI
2SC5509-T2	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE
2SC5509-T2	NEC	获取价格	NPN SILICON RF TRANSISTOR
2SC5509-T2-A	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE
2SC5509-T2-A-FB	RENESAS	获取价格	暂无描述
2SC5509-T2FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINI
2SC5509-T2-FB	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, SUPER MINIMOLD, M04, 4 PIN
2SC5509-T2FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINI
2SC551	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 3A I(C) \| TO-210AB
2SC5510	HITACHI	获取价格	Power Bipolar Transistor, Plastic/Epoxy, 3 Pin, TO-3PFM, 3 PIN