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2SC5509-T2FB

更新时间： 2024-02-27 01:09:19

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
15页	82K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINIMOLD, M04, 4 PIN

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技术参数
数据手册

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2SC5509-T2FB 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	SUPER MINIMOLD, M04, 4 PIN	Reach Compliance Code：	compliant
风险等级：	5.7	其他特性：	LOW NOISE
最大集电极电流 (IC)：	0.1 A	基于收集器的最大容量：	0.75 pF
集电极-发射极最大电压：	3.3 V	配置：	SINGLE
最高频带：	L BAND	JESD-30 代码：	R-PDSO-F4
JESD-609代码：	e6	湿度敏感等级：	1
元件数量：	1	端子数量：	4
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN BISMUTH
端子形式：	FLAT	端子位置：	DUAL
处于峰值回流温度下的最长时间：	10	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	15000 MHz
Base Number Matches：	1

2SC5509-T2FB 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5509

NPN SILICON RF TRANSISTOR FOR

MEDIUM OUTPUT POWER LOW NOISE HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD

FEATURES

•

Ideal for medium output power amplification

NF = 1.2 dB TYP., G^a= 12 dB TYP. @ V^CE= 2 V, I^C= 10 mA, f = 2 GHz

Maximum available power gain: MAG = 14 dB TYP. @ V^CE= 2 V, I^C= 50 mA, f = 2 GHz

f^T= 25 GHz technology adopted

Flat-lead 4-pin thin-type super minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5509

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape

2SC5509-T2

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

3.3

1.5

100

°C

tot ^Note

190

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Free Air

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10009EJ01V0DS (1st edition)

Date Published October 2001 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 2001

12 3 4 5 6 7...15

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