2SC5509-A-FB

更新时间： 2024-09-28 13:04:23

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管射频输出元件
页数	文件大小	规格书
10页	231K
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2SC5509-A-FB 数据手册

Preliminary Data Sheet

2SC5509

NPN SILICON RF TRANSISTOR

R09DS0056EJ0300

FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

Rev.3.00

Mar 5, 2013

FEATURES

•

Ideal for medium output power amplification

NF = 1.2 dB TYP., G_a= 12 dB TYP. @ V_CE= 2 V, I_C= 10 mA, f = 2 GHz

Maximum available power gain: MAG = 14 dB TYP. @ V_CE= 2 V, I_C= 50 mA, f = 2 GHz

f_T= 25 GHz technology adopted

Flat-lead 4-pin thin-type super minimold (M04) package

<R>

ORDERING INFORMATION

Part Number

Order Number

Quantity

Package

Supplying Form

2SC5509

2SC5509-A

50 pcs (Non reel) Flat-lead 4-pin

thin-type super

•

8 mm wide embossed taping

Pin 1 (Emitter), Pin 2 (Collector) face

the perforation side of the tape

minimold (M04)

(Pb-Free)

2SC5509-T2

2SC5509-T2-A

3 kpcs/reel

Remark To order evaluation samples, please contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T_C= 25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

3.3

1.5

100

°C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

P_tot

190

T_j

150

T_stg

−65 to +150

Note Free air.

THERMAL RESISTANCE

Parameter

Symbol

R_{th j-c}

Ratings

Unit

°C /W

Junction to Case Resistance

Junction to Ambient Resistance

R_{th j-a}

650

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

R09DS0056EJ0300 Rev.3.00

Mar 5, 2013

Page 1 of 8

12 3 4 5 6 7...10

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与2SC5509-A-FB相关器件

型号	品牌	获取价格	描述	数据表
2SC5509-A-YFB	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
2SC5509-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINI
2SC5509-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINI
2SC5509-T2	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE
2SC5509-T2	NEC	获取价格	NPN SILICON RF TRANSISTOR
2SC5509-T2-A	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE
2SC5509-T2-A-FB	RENESAS	获取价格	暂无描述
2SC5509-T2FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINI
2SC5509-T2-FB	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, SUPER MINIMOLD, M04, 4 PIN
2SC5509-T2FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINI