Datasheet > 晶体管 > 射频小信号双极晶体管> 2SC5508-T2B

2SC5508-T2B

更新时间： 2024-11-27 12:33:15

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管射频
页数	文件大小	规格书
10页	229K
描述
NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC5508-T2B 数据手册

Preliminary Data Sheet

2SC5508

NPN SILICON RF TRANSISTOR

R09DS0055EJ0200

Rev.2.00

FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

Mar 5, 2013

FEATURES

•

Ideal for low-noise, high-gain amplification applications

NF = 1.1 dB TYP., G_a= 16 dB TYP. @ V_CE= 2 V, I_C= 5 mA, f = 2 GHz

Maximum available power gain: MAG = 19 dB TYP. @ V_CE= 2 V, I_C= 20 mA, f = 2 GHz

f_T= 25 GHz technology adopted

Flat-lead 4-pin thin-type super minimold (M04) package

<R>

ORDERING INFORMATION

Part Number

Order Number

Quantity

Package

Supplying Form

Flat-lead 4-pin

thin-type super

minimold (M04)

(Pb-Free)

•

8 mm wide embossed taping

2SC5508

2SC5508-A

50 pcs (Non reel)

Pin 1 (Emitter), Pin 2 (Collector) face

the perforation side of the tape

2SC5508-T2

2SC5508-T2-A

3 kpcs/reel

2SC5508-T2B 2SC5508-T2B-A 15 kpcs/reel

Remark To order evaluation samples, please contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T_C= 25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

3.3

1.5

°C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

P_tot

115

T_j

150

T_stg

−65 to +150

Note Free air.

THERMAL RESISTANCE

Parameter

Symbol

R_{th j-c}

Ratings

150

Unit

°C /W

Junction to Case Resistance

Junction to Ambient Resistance

R_{th j-a}

650

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

R09DS0055EJ0200 Rev.2.00

Mar 5, 2013

Page 1 of 8

12 3 4 5 6 7...10

中文翻译

下载PDF

与2SC5508-T2B相关器件

型号	品牌	获取价格	描述	数据表
2SC5508-T2B-A	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
2SC5508-T2B-A-FB	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
2SC5508-T2B-A-YFB	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
2SC5508-T2FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC,
2SC5508-T2FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC,
2SC5509	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE
2SC5509	NEC	获取价格	NPN SILICON RF TRANSISTOR
2SC5509(NE663M04)	ETC	获取价格	Discrete
2SC5509-A	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE
2SC5509-A-FB	RENESAS	获取价格	暂无描述