Datasheet > 2SC5508

2SC5508

更新时间： 2024-11-30 14:54:43

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
3页	139K
描述
NPN

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2SC5508 数据手册

UNISONIC TECHNOLOGIES CO., LTD

2SC5508

Preliminary

NPN EPITAXIAL SILICON TRANSISTOR

NPN SILICON RF TRANSISTOR

DESCRIPTION

The UTC 2SC5508 is an NPN silicon RF transistor, it uses UTC’s

advanced technology to provide customers with low-noise, etc.

The UTC 2SC5508 is suitable for low-noise, high-gain

amplification applications.

FEATURES

* Maximum available power gain: MAG=19dB TYP. @ V_CE=2V,

I_C=20mA, f=2GHz

* f_T=25GHz technology adopted

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

SOT-363

Packing

Lead Free

Halogen Free

2SC5508G-x-AL6-R

2SC5508L-x-AL6-R

E1 B1 C2 E2 B2 C1 Tape Reel

Note: Pin Assignment: E: Emitter B: Base C: Collector

2SC5508G-x-AL6-R

(1) R: Tape Reel

(2) AL6: SOT-363

(2) x: reference to Classification of h^FE

(1)Packing Type

(2)Package Type

(3)Rank

(4)Green Package

(4) G: Halogen Free and Lead Free, L: Lead Free

MARKING

www.unisonic.com.tw

1 of 3

QW-R221-039.b

12 3

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与2SC5508相关器件

型号	品牌	获取价格	描述	数据表
2SC5508(NE662M04)	ETC	获取价格	Discrete
2SC5508-A	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
2SC5508-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC,
2SC5508-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC,
2SC5508-T2	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPE
2SC5508-T2	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
2SC5508-T2-A	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
2SC5508-T2B	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
2SC5508-T2B-A	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
2SC5508-T2B-A-FB	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR