2SC5407

更新时间： 2024-01-27 02:17:36

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	223K
描述
Silicon NPN Power Transistor

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数据手册

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2SC5407 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC5407

ELECTRICAL CHARACTERISTICS

T_C=25℃ unless otherwise specified

SYMBOL

PARAMETER

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Collector Cutoff Current

CONDITIONS

MIN

TYP. MAX UNIT

I_C= 7.5A; I_B= 1.88A

3.0

1.5

V_CE

(sat)

I_C= 7.5A; I_B= 1.88A

V_CB= 1000V; I_E= 0

V_BE

(sat)

μA

I_CBO

_CB= 1700V; I_E= 0

1.0

I_EBO

h_FE

f_T

Emitter Cutoff Current

V_EB= 5V; I_C= 0

μA

DC Current Gain

I_C= 7.5A; V_CE= 5V

I_C= 0.5A; V_CE= 10V

Current-Gain—Bandwidth Product

MHz

Switching Times

Storage Time

4.0

0.3

μs

t_stg

I_C= 8A, I_B1= 2A; I_B2= -4A

Fall Time

t_f

isc Website：www.iscsemi.cn

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