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2SC5009-T1

更新时间： 2024-11-14 22:35:55

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
10页	61K
描述
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

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中文翻译

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数据手册

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2SC5009-T1 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC5009

NPN SILICON EPITAXIAL TRANSISTOR

3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION

The 2SC5009 is an NPN epitaxial silicon transistor designed for use

in low noise and small signal amplifiers from VHF band to L band. Low

noise figure, high gain, and high current capability achieve a very wide

dynamic range and excellent linearity. This is achieved by direct nitride

passivated base surface process (NEST3 process) which is an NEC

proprietary new fabrication technique.

PACKAGE DIMENSIONS

in milimeters

1.6 ± 0.1

0.8 ± 0.1

FEATURES

•

Low Voltage Use.

High f^T

Low Cre

Low NF

: 12.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)

: 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)

: 2.5 dB TYP. (@ V^CE= 3 V, IC = 3 mA, f = 2 GHz)

High |S^21e|²: 8.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)

Ultra Super Mini Mold Package.

ORDERING INFORMATION

PART

1. Emitter

2. Base

QUANTITY

NUMBER

PACKING STYLE

Embossed tape 8 mm wide.

Pin 3 (Collector) face to perforation side

of the tape.

2SC5009

50 pcs./Unit

3 kpcs./Reel

3. Collector

2SC5009-T1

* PleasecontactwithresponsibleNECperson, ifyourequireevaluation

sample. Unit sample quantity shall be 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

VCBO

VCEO

VEBO

I^C

˚C

Total Power Dissipation

Junction Temperature

Storage Temperature

150

T^stg

–65 to +150

Document No. P10388EJ2V0DS00 (2nd edition)

(Previous No. TD-2430)

Date Published July 1995 P

Printed in Japan

1993

12 3 4 5 6 7...10

中文翻译

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2SC5010-T1	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
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