2SC5011

更新时间： 2024-01-04 21:46:33

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器晶体管
页数	文件大小	规格书
8页	54K
描述
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

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中文翻译

获取价格

数据手册
替代型号

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2SC5011 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC5011

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS SUPER MINI MOLD

FEATURES

•

Small Package

PACKAGE DIMENSIONS

High Gain Bandwidth Product

(f^T= 6.5 GHz TYP.)

in millimeters

2.1 ± 0.2

•

Low Noise, High Gain

Low Voltage Operation

1.25 ± 0.1

+0.1

0.3

–0.05

(LEADS 2, 3, 4)

ORDERING INFORMATION

PART

QUANTITY

NUMBER

PACKING STYLE

+0.1

–0.05

0.4

2SC5011-T1

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin3 (Base), Pin4 (Emitter) face to

perforation side of the tape.

+0.1

–0.05

0.15

0 to 0.1

2SC5011-T2

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin1 (Collector), Pin2 (Emitter) face

to perforation side of the tape.

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

Please contact with responsible NEC person, if you require

evaluation sample. It is available for 50 pcs. one unit sample lot.

(Part No.: 2SC5011)

4. Emitter

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

VCBO

V^CEO

VEBO

I^C

100

˚C

Total Power Dissipation

Junction Temperature

Storage Temperature

150

T^stg

–65 to +150

Caution; Electrostatic Sensitive Device.

Document No. P10399EJ2V0DS00 (2nd edition)

(Previous No. TD-2411)

Date Published July 1995 P

Printed in Japan

1993

12 3 4 5 6 7 8

中文翻译

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2SC5011 替代型号

型号	品牌	替代类型	描述	数据表
2SC5011	RENESAS	功能相似	NPN EPITAXIAL SILICON RF TRANSISTOR

与2SC5011相关器件

型号	品牌	获取价格	描述	数据表
2SC5011(NE85618)	ETC	获取价格	Discrete
2SC5011-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5011EB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5011-EB	NEC	获取价格	Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-4
2SC5011-EB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5011EB-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-343R
2SC5011FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5011-FB	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-4
2SC5011-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5011FB-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-343R