Datasheet > 2SC5011-T1EB

2SC5011-T1EB

更新时间： 2024-02-23 07:07:05

品牌	Logo	应用领域
日电电子 - NEC		放大器光电二极管晶体管
页数	文件大小	规格书
7页	57K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SUPER MINIMOLD PACKAGE-4

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技术参数
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2SC5011-T1EB 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.84	最大集电极电流 (IC)：	0.1 A
基于收集器的最大容量：	0.9 pF	集电极-发射极最大电压：	12 V
配置：	SINGLE	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PDSO-G4	元件数量：	1
端子数量：	4	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	6500 MHz

2SC5011-T1EB 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5011

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

4-PIN SUPER MINIMOLD

FEATURES

•

High Gain Bandwidth Product (fT = 6.5 GHz TYP.)

Low Noise, High Gain

Low Voltage Operation

4-pin super minimold Package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5011

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape

2SC5011-T1

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

100

°C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

150

−65 to +150

Tstg

Note Free air

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10515EJ01V0DS (1st edition)

(Previous No. P10399EJ2V0DS00)

Date Published August 2004 CP(K)

The mark shows major revised points.

NEC Compound Semiconductor Devices, Ltd. 1993 , 2004

Printed in Japan

12 3 4 5 6 7

中文翻译

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与2SC5011-T1EB相关器件

型号	品牌	获取价格	描述	数据表
2SC5011-T1-EB	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-4
2SC5011-T1EB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5011-T1FB	NEC	获取价格	暂无描述
2SC5011-T1FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5011-T1GB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5011-T1-GB	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-4
2SC5011-T1GB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5011-T2	NEC	获取价格	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
2SC5011-T2EB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5011-T2FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic

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