生命周期: | Obsolete | 包装说明: | SUPER MINIMOLD PACKAGE-4 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.6 | 其他特性: | LOW NOISE |
最大集电极电流 (IC): | 0.065 A | 基于收集器的最大容量: | 0.8 pF |
集电极-发射极最大电压: | 10 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 125 | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.15 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 9000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5012GB-T1 | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,10V V(BR)CEO,65MA I(C),SOT-343R | |
2SC5012-T1 | NEC |
获取价格 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD | |
2SC5012-T1 | RENESAS |
获取价格 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SUPERMINI-4 | |
2SC5012-T1-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil | |
2SC5012-T1EB | NEC |
获取价格 |
暂无描述 | |
2SC5012-T1-EB | RENESAS |
获取价格 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-4 | |
2SC5012-T1EB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil | |
2SC5012-T1FB | NEC |
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暂无描述 | |
2SC5012-T1FB-A | NEC |
获取价格 |
暂无描述 | |
2SC5012-T1GB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Silicon, NPN, SUPER MINIMOLD P |