2SC5012-T2

更新时间： 2024-11-14 22:35:55

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器晶体管
页数	文件大小	规格书
7页	53K
描述
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

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中文翻译

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数据手册

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2SC5012-T2 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC5012

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS SUPER MINI MOLD

FEATURES

•

Small Package

PACKAGE DIMENSIONS

High Gain Bandwidth Product (f

Low Noise, High Gain

= 9 GHz TYP.)

in millimeters

2.1 ± 0.2

Low Voltage Operation

1.25 ± 0.1

+0.1

–0.05

0.3

(LEADS 2, 3, 4)

ORDERING INFORMATION

PART

QUANTITY

NUMBER

PACKING STYLE

+0.1

–0.05

0.4

2SC5012-T1

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin 3 (Base), Pin 4 (Emitter) face to

perforation side of the tape.

2SC5012-T2

3 Kpcs/Reel.

Embossed tape 8 mm wide.

+0.1

–0.05

0.15

Pin1 (Collector), Pin2 (Emitter) face

to perforation side of the tape.

0 to 0.1

PIN CONNECTIONS

Please contact with responsible NEC person, if you require

evaluation sample. Unit sample quantity shall be 50 pcs.

(Part No.: 2SC5012)

1. Collector

2. Emitter

3. Base

4. Emitter

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

VCBO

V^CEO

V^EBO

1.5

˚C

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

150

Tstg

–65 to +150

Caution; Electrostatic Sensitive Device.

Document No. P10400EJ2V0DS00 (2nd edition)

(Previous No. TD-2412)

Date Published July 1995 P

Printed in Japan

1993

12 3 4 5 6 7

中文翻译

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2SC5012-T2-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
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2SC5012-T2EB-A	NEC	获取价格	暂无描述
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2SC5012-T2FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
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