是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.68 | 最大集电极电流 (IC): | 0.035 A |
基于收集器的最大容量: | 0.8 pF | 集电极-发射极最大电压: | 10 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 50 |
最高频带: | L BAND | JESD-30 代码: | R-PDSO-G4 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 225 |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.15 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 10000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5013-EB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, |
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2SC5013EB-A | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,10V V(BR)CEO,35MA I(C),SOT-343R |
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2SC5013EB-T1-A | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,10V V(BR)CEO,35MA I(C),SOT-343R |
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2SC5013FB | RENESAS |
获取价格 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-4 |
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2SC5013FB-A | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,10V V(BR)CEO,35MA I(C),SOT-343R |
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2SC5013FB-T1 | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,10V V(BR)CEO,35MA I(C),SOT-343R |
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2SC5013FB-T1-A | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,10V V(BR)CEO,35MA I(C),SOT-343R |
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2SC5013GB | RENESAS |
获取价格 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-4 |
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2SC5013-GB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, |
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2SC5013GB-A | RENESAS |
获取价格 |
暂无描述 |
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