2SC5013-T2GB-A

更新时间： 2024-11-09 12:58:51

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器晶体管
页数	文件大小	规格书
8页	54K
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中文翻译

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数据手册

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2SC5013-T2GB-A 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC5013

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS SUPER MINI MOLD

FEATURES

•

Small Package

PACKAGE DIMENSIONS

High Gain Bandwidth Product (f

Low Noise, High Gain

= 10 GHz TYP.)

in millimeters

2.1 ± 0.2

Low Voltage Operation

1.25 ± 0.1

+0.1

–0.05

0.3

(LEADS 2, 3, 4)

ORDERING INFORMATION

PART

QUANTITY

NUMBER

PACKING STYLE

+0.1

–0.05

0.4

2SC5013-T1

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin3 (Base), Pin4 (Emitter) face to

perforation side of the tape.

2SC5013-T2

3 Kpcs/Reel.

Embossed tape 8 mm wide.

+0.1

–0.05

0.15

0 to 0.1

Pin1 (Collector), Pin2 (Emitter) face

to perforation side of the tape.

PIN CONNECTIONS

Please contact with responsible NEC person, If you require

evaluation sample. Unit sample quantity shall be 50 pcs.

(Part No.: 2SC5013)

1. Collector

2. Emitter

3. Base

4. Emitter

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

VCBO

V^CEO

V^EBO

1.5

˚C

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

150

Tstg

–65 to +150

Caution; Electrostatic Sensitive Device.

Document No. P10401EJ2V0DS00 (2nd edition)

(Previous No. TD-2413)

Date Published July 1995 P

Printed in Japan

1993

12 3 4 5 6 7 8

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