Datasheet > 晶体管 > 射频小信号双极晶体管> 2SC5015-T2

2SC5015-T2

更新时间： 2024-09-08 22:52:43

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器晶体管
页数	文件大小	规格书
8页	53K
描述
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

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中文翻译

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数据手册

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2SC5015-T2 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC5015

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS SUPER MINI MOLD

FEATURES

PACKAGE DIMENSIONS

•

Small Package

in millimeters

High Gain Bandwidth Product (f^T= 12 GHz TYP.)

Low Noise, High Gain

2.1 ± 0.2

1.25 ± 0.1

+0.1

–0.05

0.3

Low Voltage Operation

(LEADS 2, 3, 4)

ORDERING INFORMATION

PART

QUANTITY

NUMBER

PACKING STYLE

+0.1

–0.05

0.4

2SC5015-T1

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin3 (Base), Pin4 (Emitter) face to

perforation side of the tape.

+0.1

–0.05

2SC5015-T2

3 Kpcs/Reel.

Embossed tape 8 mm wide.

0 to 0.1

0.15

Pin1 (Collector), Pin2 (Emitter) face to

perforation side of the tape.

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. Emitter

* PleasecontactwithresponsibleNECperson, ifyourequireevaluation

sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC5014)

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

VCBO

VCEO

V^EBO

I^C

˚ C

Total Power Dissipation

Junction Temperature

Storage Temperature

150

Tⁱ

150

Tstg

–65 to + 150

Caution: Electrostatic Sensitive Device

Document No. P10394EJ2V0DS00 (2nd edition)

(Previous No. TD-7938)

Date Published August 1995 P

Printed in Japan

1993

12 3 4 5 6 7 8

中文翻译

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