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2SC5014-T1KB PDF预览

2SC5014-T1KB

更新时间: 2024-09-09 13:04:19
品牌 Logo 应用领域
日电电子 - NEC 晶体放大器晶体管
页数 文件大小 规格书
8页 51K
描述
RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, SUPERMINI-4

2SC5014-T1KB 技术参数

生命周期:Obsolete包装说明:PLASTIC, SUPERMINI-4
Reach Compliance Code:unknown风险等级:5.84
最大集电极电流 (IC):0.01 A基于收集器的最大容量:0.4 pF
集电极-发射极最大电压:6 V配置:SINGLE
最高频带:L BANDJESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):12000 MHzBase Number Matches:1

2SC5014-T1KB 数据手册

 浏览型号2SC5014-T1KB的Datasheet PDF文件第2页浏览型号2SC5014-T1KB的Datasheet PDF文件第3页浏览型号2SC5014-T1KB的Datasheet PDF文件第4页浏览型号2SC5014-T1KB的Datasheet PDF文件第5页浏览型号2SC5014-T1KB的Datasheet PDF文件第6页浏览型号2SC5014-T1KB的Datasheet PDF文件第7页 
DATA SHEET  
SILICON TRANSISTOR  
2SC5014  
HIGH FREQUENCY LOW NOISE AMPLIFIER  
NPN SILICON EPITAXIAL TRANSISTOR  
4 PINS SUPER MINI MOLD  
FEATURES  
Small Package  
PACKAGE DIMENSIONS  
High Gain Bandwidth Product (fT = 12 GHz TYP.)  
Low Noise, High Gain  
in millimeters  
2.1 ± 0.2  
Low Voltage Operation  
1.25 ± 0.1  
ORDERING INFORMATION  
PART  
QUANTITY  
NUMBER  
PACKING STYLE  
2SC5014-T1  
3 Kpcs/Reel.  
Embossed tape 8 mm wide.  
Pin3 (Base), Pin4 (Emitter) face to  
perforation side of the tape.  
2SC5014-T2  
3 Kpcs/Reel.  
Embossed tape 8 mm wide.  
Pin1 (Collector), Pin2 (Emitter) face  
to perforation side of the tape.  
*
Please contact with responsible NEC person, if you require  
evaluation sample. Unit sample quantity shall be 50 pcs.  
(Part No.: 2SC5014)  
PIN CONNECTIONS  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
1. Collector  
2. Emitter  
3. Base  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
9
V
V
6
4. Emitter  
2
V
10  
60  
mA  
mW  
˚C  
˚C  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
Tj  
150  
Tstg  
–65 to +150  
Caution; Electrostatic Sensitive Device.  
Document No. P10393EJ2V0DS00 (2nd edition)  
(Previous No. TD-2414)  
Date Published August 1995 P  
Printed in Japan  
1993  
©

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