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2SC5015(NE68518)

更新时间: 2024-09-08 23:20:23
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其他 - ETC /
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8页 46K
描述
Discrete

2SC5015(NE68518) 数据手册

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DATA SHEET  
SILICON TRANSISTOR  
2SC5015  
HIGH FREQUENCY LOW NOISE AMPLIFIER  
NPN SILICON EPITAXIAL TRANSISTOR  
4 PINS SUPER MINI MOLD  
FEATURES  
PACKAGE DIMENSIONS  
Small Package  
in millimeters  
High Gain Bandwidth Product (fT = 12 GHz TYP.)  
Low Noise, High Gain  
2.1 ± 0.2  
1.25 ± 0.1  
+0.1  
–0.05  
0.3  
Low Voltage Operation  
(LEADS 2, 3, 4)  
2
1
3
4
ORDERING INFORMATION  
PART  
QUANTITY  
NUMBER  
PACKING STYLE  
+0.1  
–0.05  
0.4  
2SC5015-T1  
3 Kpcs/Reel.  
Embossed tape 8 mm wide.  
Pin3 (Base), Pin4 (Emitter) face to  
perforation side of the tape.  
+0.1  
–0.05  
2SC5015-T2  
3 Kpcs/Reel.  
Embossed tape 8 mm wide.  
0 to 0.1  
0.15  
Pin1 (Collector), Pin2 (Emitter) face to  
perforation side of the tape.  
PIN CONNECTIONS  
1. Collector  
2. Emitter  
3. Base  
4. Emitter  
* PleasecontactwithresponsibleNECperson, ifyourequireevaluation  
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC5014)  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
9
V
V
6
2
30  
V
mA  
mW  
˚ C  
˚ C  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
150  
Ti  
150  
Tstg  
–65 to + 150  
Caution: Electrostatic Sensitive Device  
Document No. P10394EJ2V0DS00 (2nd edition)  
(Previous No. TD-7938)  
Date Published August 1995 P  
Printed in Japan  
1993  
©

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