是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.45 | 最大集电极电流 (IC): | 0.065 A |
基于收集器的最大容量: | 0.8 pF | 集电极-发射极最大电压: | 10 V |
配置: | SINGLE | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e6 |
元件数量: | 1 | 端子数量: | 4 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN BISMUTH |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 9000 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5012-T2EB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil |
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2SC5012-T2EB-A | NEC |
获取价格 |
暂无描述 |
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2SC5012-T2FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Silicon, NPN, SUPER MINIMOLD P |
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2SC5012-T2FB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil |
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2SC5012-T2GB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil |
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2SC5012-T2GB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil |
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2SC5013 | NEC |
获取价格 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
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2SC5013 | RENESAS |
获取价格 |
NPN EPITAXIAL SILICON RF TRANSISTOR |
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2SC5013(NE68018) | ETC |
获取价格 |
Discrete |
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2SC5013-A | RENESAS |
获取价格 |
2SC5013-A |
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