生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.6 | 最大集电极电流 (IC): | 0.065 A |
基于收集器的最大容量: | 0.8 pF | 集电极-发射极最大电压: | 10 V |
配置: | SINGLE | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 9000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5012-T2GB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil |
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2SC5013 | NEC |
获取价格 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
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2SC5013 | RENESAS |
获取价格 |
NPN EPITAXIAL SILICON RF TRANSISTOR |
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2SC5013(NE68018) | ETC |
获取价格 |
Discrete |
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2SC5013-A | RENESAS |
获取价格 |
2SC5013-A |
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2SC5013EB | RENESAS |
获取价格 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-4 |
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2SC5013-EB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, |
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2SC5013EB-A | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,10V V(BR)CEO,35MA I(C),SOT-343R |
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2SC5013EB-T1-A | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,10V V(BR)CEO,35MA I(C),SOT-343R |
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2SC5013FB | RENESAS |
获取价格 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-4 |
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