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2SC5013(NE68018)

更新时间: 2024-01-04 09:33:17
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8页 47K
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Discrete

2SC5013(NE68018) 数据手册

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DATA SHEET  
SILICON TRANSISTOR  
2SC5013  
HIGH FREQUENCY LOW NOISE AMPLIFIER  
NPN SILICON EPITAXIAL TRANSISTOR  
4 PINS SUPER MINI MOLD  
FEATURES  
Small Package  
PACKAGE DIMENSIONS  
High Gain Bandwidth Product (f  
Low Noise, High Gain  
T
= 10 GHz TYP.)  
in millimeters  
2.1 ± 0.2  
Low Voltage Operation  
1.25 ± 0.1  
+0.1  
–0.05  
0.3  
(LEADS 2, 3, 4)  
ORDERING INFORMATION  
2
1
3
4
PART  
QUANTITY  
NUMBER  
PACKING STYLE  
+0.1  
–0.05  
0.4  
2SC5013-T1  
3 Kpcs/Reel.  
Embossed tape 8 mm wide.  
Pin3 (Base), Pin4 (Emitter) face to  
perforation side of the tape.  
2SC5013-T2  
3 Kpcs/Reel.  
Embossed tape 8 mm wide.  
+0.1  
–0.05  
0.15  
0 to 0.1  
Pin1 (Collector), Pin2 (Emitter) face  
to perforation side of the tape.  
PIN CONNECTIONS  
*
Please contact with responsible NEC person, If you require  
evaluation sample. Unit sample quantity shall be 50 pcs.  
(Part No.: 2SC5013)  
1. Collector  
2. Emitter  
3. Base  
4. Emitter  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
20  
V
V
10  
1.5  
V
35  
mA  
mW  
˚C  
˚C  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
150  
Tj  
150  
Tstg  
–65 to +150  
Caution; Electrostatic Sensitive Device.  
Document No. P10401EJ2V0DS00 (2nd edition)  
(Previous No. TD-2413)  
Date Published July 1995 P  
Printed in Japan  
1993  
©

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