是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
最大集电极电流 (IC): | 0.1 A | 配置: | Single |
最小直流电流增益 (hFE): | 125 | 最高工作温度: | 150 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.15 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5011GB-T1-A | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-343R |
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2SC5011-T1 | NEC |
获取价格 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
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2SC5011-T1 | RENESAS |
获取价格 |
NPN EPITAXIAL SILICON RF TRANSISTOR |
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2SC5011-T1-A | RENESAS |
获取价格 |
暂无描述 |
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2SC5011-T1EB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |
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2SC5011-T1-EB | RENESAS |
获取价格 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-4 |
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2SC5011-T1EB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |
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2SC5011-T1FB | NEC |
获取价格 |
暂无描述 |
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2SC5011-T1FB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |
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2SC5011-T1GB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |
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