是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.1 A |
配置: | Single | 最小直流电流增益 (hFE): | 80 |
最高工作温度: | 150 °C | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.15 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5011GB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |
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2SC5011-GB | RENESAS |
获取价格 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-4 |
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2SC5011-GB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |
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2SC5011GB-T1 | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-343R |
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2SC5011GB-T1-A | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-343R |
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2SC5011-T1 | NEC |
获取价格 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
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2SC5011-T1 | RENESAS |
获取价格 |
NPN EPITAXIAL SILICON RF TRANSISTOR |
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2SC5011-T1-A | RENESAS |
获取价格 |
暂无描述 |
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2SC5011-T1EB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |
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2SC5011-T1-EB | RENESAS |
获取价格 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-4 |
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