是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SUPER MINIMOLD PACKAGE-4 | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.67 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.1 A |
基于收集器的最大容量: | 0.9 pF | 集电极-发射极最大电压: | 12 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 50 |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.15 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 6500 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5011-EB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |
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2SC5011EB-A | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-343R |
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2SC5011FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |
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2SC5011-FB | RENESAS |
获取价格 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-4 |
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2SC5011-FB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |
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2SC5011FB-A | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-343R |
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2SC5011FB-T1 | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-343R |
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2SC5011FB-T1-A | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-343R |
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2SC5011GB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |
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2SC5011-GB | RENESAS |
获取价格 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-4 |
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