Datasheet > 2SC5010(NE68519)

2SC5010(NE68519)

更新时间： 2024-09-28 23:20:23

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
10页	54K
描述
Discrete

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数据手册

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2SC5010(NE68519) 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC5010

NPN SILICON EPITAXIAL TRANSISTOR

3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION

The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from

VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and

excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an

NEC proprietary fabrication technique.

FEATURES

•

Low Voltage Use.

PACKAGE DIMENSIONS

High f^T

Low Cre

Low NF

: 12.0 GHz TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz)

in milimeters

: 0.4 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)

: 1.5 dB TYP. (@ V^CE= 3 V, IC = 3 mA, f = 2 GHz)

1.6 ± 0.1

0.8 ± 0.1

High |S^21e|²: 8.5 dB TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz)

Ultra Super Mini Mold Package.

ORDERING INFORMATION

PART

QUANTITY

NUMBER

PACKING STYLE

2SC5010

50 pcs/Unit.

3 kpcs/Reel.

Embossed tape 8 mm wide.

Pin3(Collector) face to perforation side

of the tape.

2SC5010-T1

PleasecontactwithresponsibleNECperson,ifyourequireevaluation

sample. Unit sample quantity shall be 50 pcs.

1. Emitter

2. Base

3. Collector

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

VCBO

V^CEO

V^EBO

˚C

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

125

T^j

150

Tstg

–65 to +150

Document No. P10389EJ2V0DS00 (2nd edition)

(Previous No. TD-2401)

Date Published July 1995 P

Printed in Japan

1993

12 3 4 5 6 7...10

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与2SC5010(NE68519)相关器件

型号	品牌	获取价格	描述	数据表
2SC5010-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUP
2SC5010-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUP
2SC5010-T1	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
2SC5010-T1	RENESAS	获取价格	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
2SC5010-T1-A/YFB	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5010-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUP
2SC5010-T1-FB	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3
2SC5010-T1FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUP
2SC5011	RENESAS	获取价格	NPN EPITAXIAL SILICON RF TRANSISTOR
2SC5011	NEC	获取价格	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD