Datasheet > 晶体管 > 射频小信号双极晶体管> 2SC5010-T1

2SC5010-T1

更新时间： 2024-11-14 22:08:19

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管光电二极管
页数	文件大小	规格书
10页	63K
描述
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

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中文翻译

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技术参数
数据手册

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2SC5010-T1 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.13	Is Samacsys：	N
JESD-30 代码：	R-PDSO-G3	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	Base Number Matches：	1

2SC5010-T1 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC5010

NPN SILICON EPITAXIAL TRANSISTOR

3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION

The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from

VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and

excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an

NEC proprietary fabrication technique.

FEATURES

•

Low Voltage Use.

PACKAGE DIMENSIONS

High f^T

Low Cre

Low NF

: 12.0 GHz TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz)

in milimeters

: 0.4 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)

: 1.5 dB TYP. (@ V^CE= 3 V, IC = 3 mA, f = 2 GHz)

1.6 ± 0.1

0.8 ± 0.1

High |S^21e|²: 8.5 dB TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz)

Ultra Super Mini Mold Package.

ORDERING INFORMATION

PART

QUANTITY

NUMBER

PACKING STYLE

2SC5010

50 pcs/Unit.

3 kpcs/Reel.

Embossed tape 8 mm wide.

Pin3(Collector) face to perforation side

of the tape.

2SC5010-T1

PleasecontactwithresponsibleNECperson,ifyourequireevaluation

sample. Unit sample quantity shall be 50 pcs.

1. Emitter

2. Base

3. Collector

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

VCBO

V^CEO

V^EBO

˚C

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

125

T^j

150

Tstg

–65 to +150

Document No. P10389EJ2V0DS00 (2nd edition)

(Previous No. TD-2401)

Date Published July 1995 P

Printed in Japan

1993

12 3 4 5 6 7...10

中文翻译

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与2SC5010-T1相关器件

型号	品牌	获取价格	描述	数据表
2SC5010-T1-A/YFB	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5010-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUP
2SC5010-T1-FB	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3
2SC5010-T1FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUP
2SC5011	RENESAS	获取价格	NPN EPITAXIAL SILICON RF TRANSISTOR
2SC5011	NEC	获取价格	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
2SC5011(NE85618)	ETC	获取价格	Discrete
2SC5011-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5011EB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5011-EB	NEC	获取价格	Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-4

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