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2SC5005-T1FB-A PDF预览

2SC5005-T1FB-A

更新时间: 2024-11-23 13:04:19
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管光电二极管
页数 文件大小 规格书
8页 57K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3

2SC5005-T1FB-A 技术参数

是否Rohs认证:符合生命周期:Transferred
包装说明:ULTRA SUPER MINIMOLD PACKAGE-3Reach Compliance Code:compliant
风险等级:5.72Is Samacsys:N
最大集电极电流 (IC):0.03 A基于收集器的最大容量:0.9 pF
集电极-发射极最大电压:12 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
JESD-609代码:e6湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN BISMUTH
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):5500 MHz
Base Number Matches:1

2SC5005-T1FB-A 数据手册

 浏览型号2SC5005-T1FB-A的Datasheet PDF文件第2页浏览型号2SC5005-T1FB-A的Datasheet PDF文件第3页浏览型号2SC5005-T1FB-A的Datasheet PDF文件第4页浏览型号2SC5005-T1FB-A的Datasheet PDF文件第5页浏览型号2SC5005-T1FB-A的Datasheet PDF文件第6页浏览型号2SC5005-T1FB-A的Datasheet PDF文件第7页 
DATA SHEET  
SILICON TRANSISTOR  
2SC5005  
NPN SILICON EPITAXIAL TRANSISTOR  
3 PINS ULTRA SUPER MINI MOLD  
DESCRIPTION  
PACKAGE DIMENSIONS  
The 2SC5005 is a low supply voltage transistor designed for UHF  
OSC/MIX.  
in millimeters  
It is suitable for a high density surface mount assembly since the  
transistor has been applied ultra super mini mold package.  
1.6 ± 0.1  
0.8 ± 0.1  
2
FEATURES  
High fT : 5.5 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz)  
Low Cre : 0.7 pF TYP. (@ VCB = 5 V, IE = 0, f = 1 MHz)  
Ultra Super Mini Mold Package. (1.6 mm × 0.8 mm)  
3
1
ORDERING INFORMATION  
QUANTITY  
50 pcs./unit  
3 kpcs./Reel  
PACKING STYLE  
PART NUMBER  
2SC5005  
2SC5005 – T1  
Embossed tape 8 mm wide.  
Pin 3 (Collector) face to  
perforation side of the tape.  
* Please contact with responsible NEC person, if you require evaluation  
sample. Unit sample quantity shall be 50 pcs.  
PIN CONNECTIONS  
1. Emitter  
2. Base  
3. Collector  
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C)  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
20  
V
V
12  
3
30  
V
mA  
mW  
°C  
°C  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
100  
Tj  
125  
Tstg  
–55 to +125  
Document No. P10384EJ2V0DS00 (2nd edition)  
(Previous No. TD-2429)  
Date Published July 1995  
Printed in Japan  
1995  
©

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