2SC5006-FB-A

更新时间： 2024-11-23 13:04:19

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数	文件大小	规格书
10页	64K
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中文翻译

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2SC5006-FB-A 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC5006

NPN SILICON EPITAXIAL TRANSISTOR

3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION

The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from

VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which

is an NEC proprietary fabrication technique.

FEATURES

PACKAGE DIMENSIONS

•

Low Voltage Use.

in millimeters

High fT

Low C^re

Low NF

: 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)

: 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)

: 1.2 dB TYP. (@ V^CE= 3 V, IC = 7 mA, f = 1 GHz)

1.6 ± 0.1

0.8 ± 0.1

High |S21e|²: 9 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)

Ultra Super Mini Mold Package.

ORDERING INFORMATION

PART

QUANTITY

NUMBER

PACKING STYLE

2SC5006

50 pcs./Unit

3 kpcs./Reel

Embossed tape 8 mm wide.

Pin3 (Collector) face to perforation side

of the tape.

2SC5006-T1

* PleasecontactwithresponsibleNECperson, ifyourequireevaluation

1. Emitter

2. Base

sample. Unit sample quantity shall be 50 pcs.

3. Collector

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

VCBO

VCEO

V^EBO

3.0

100

˚ C

Total Power Dissipation

Junction Temperature

Storage Temperature

125

T^j

150

Tstg

–60 to +150

Document No. P10385EJ2V0DS00 (2nd edition)

(Previous No. TD-2399)

Date Published July 1995 P

Printed in Japan

1993

12 3 4 5 6 7...10

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