Datasheet > 2SC5008(NE68019)

2SC5008(NE68019)

更新时间： 2024-09-28 23:20:23

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
10页	53K
描述
Discrete

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数据手册

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2SC5008(NE68019) 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC5008

NPN SILICON EPITAXIAL TRANSISTOR

3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION

PACKAGE DIMENSIONS

The 2SC5008 is an NPN epitaxial silicon transistor designed for use

in low noise and small signal amplifiers from VHF band to L band. Low

noise figure, high gain, and high current capability achieve a very wide

dynamic range and excellent linearity. This is achieved by direct nitride

passivated base surface, process (NEST2 process) which is an NEC

proprietary fabrication technique.

in millimeters

1.6 ± 0.1

0.8 ± 0.1

FEATURES

•

Low Voltage Use.

High f^T: 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)

Low Cre: 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)

Low NF: 1.9 dB TYP. (@ V^CE= 3 V, IC = 5 mA, f = 2 GHz)

High |S^21e|²: 7.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)

Ultra Super Mini Mold Package.

ORDERING INFORMATION

1. Emitter

2. Base

3. Collector

PART

QUANTITY

NUMBER

PACKING STYLE

2SC5008

50 pcs./Unit

3 kpcs./Reel

Embossed tape 8 mm wide.

Pin3 (Collector) face to perforation side

of the tape.

2SC5008-T1

* PleasecontactwithresponsibleNECperson, ifyourequireevaluation

sample. Unit sample quantity shall be 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

VCBO

VCEO

V^EBO

1.5

Total Power Dissipation

Junction Temperature

Storage Temperature

125 mW

150

T^j

˚ C

Tstg

–65 to + 150

Document No. P10387EJ2V0DS00 (2nd edition)

(Previous No. TD-2433)

Date Published July 1995 P

Printed in Japan

1993

12 3 4 5 6 7...10

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与2SC5008(NE68019)相关器件

型号	品牌	获取价格	描述	数据表
2SC5008-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU
2SC5008-FB	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3
2SC5008-T1	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
2SC5008-T1	RENESAS	获取价格	NPN SILICON EPITAXIAL TRANSISTOR
2SC5008-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU
2SC5008-T1-FB	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3
2SC5008-T1FB-A	NEC	获取价格	暂无描述
2SC5009	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
2SC5009FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN,
2SC5009-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUP